? 2007 ixys all rights reserved 1 - 2 dsec 60-12a 0701 ixys reserves the right to change limits, test conditions and dimensions. i fav = 2x30 a v rrm = 1200 v t rr =40ns v rsm v rrm type v v 1200 1200 dsec 60-12a symbol conditions maximum ratings i frms 70 a i favm t c = 115c; rectangular, d = 0.5 30 a i fsm t vj = 45c; t p = 10 ms (50 hz), sine 200 a e as t vj = 25c; non-repetitive 14 mj i as = 11.5 a; l = 180 h i ar v a = 1.25 v r typ.; f = 10 khz; repetitive 1.2 a t vj -55...+175 c t vjm 175 c t stg -55...+150 c p tot t c = 25c 165 w m d mounting torque 0.8...1.2 nm weight typical 6 g symbol conditions characteristic values typ. max. i r t vj = 25c v r = v rrm 250 a t vj = 150c v r = v rrm 1ma v f i f = 30 a; t vj = 150c 1.78 v t vj = 25c 2.74 v r thjc 0.9 k/w r thch 0.25 k/w t rr i f = 1 a; -di/dt = 200 a/ s; 40 ns v r = 30 v; t vj = 25c i rm v r = 100 v; i f = 50 a; -di f /dt = 100 a/ s 8.5 11.4 a t vj = 100c features ? international standard package ? planar passivated chips ? very short recovery time ? extremely low switching losses ? low i rm -values ? soft recovery behaviour ? epoxy meets ul 94v-0 applications ? antiparallel diode for high frequency switching devices ? antisaturation diode ? snubber diode ? free wheeling diode in converters and motor control circuits ? rectifiers in switch mode power supplies (smps) ? inductive heating ? uninterruptible power supplies (ups) ? ultrasonic cleaners and welders advantages ? avalanche voltage rated for reliable operation ? soft reverse recovery for low emi/rfi ? low i rm reduces: - power dissipation within the diode - turn-on loss in the commutating switch dimensions see outlines.pdf hiperfred tm epitaxial diode with common cathode and soft recovery pulse test: pulse width = 5 ms, duty cycle < 2.0% pulse width = 300 s, duty cycle < 2.0% data according to iec 60747 and per diode unless otherwise specified. ac a a = anode, c = cathode, tab = cathode to-247 ad c a a c (tab)
? 2007 ixys all rights reserved 2 - 2 dsec 60-12a 0701 ixys reserves the right to change limits, test conditions and dimensions. 200 600 1000 0 400 800 120 140 160 180 200 220 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 40 80 120 0.0 0.4 0.8 1.2 v fr di f /dt v 200 600 1000 0 400 800 0 10 20 30 40 50 60 100 1000 0 1 2 3 4 5 01234 0 10 20 30 40 50 60 70 i rm q r i f a v f -di f /dt -di f /dt a/ s a v c a/ s a/ s t rr ns t fr z thjc a/ s s dsep 30-12a/dsec 60-12a i f = 60a i f = 30a i f = 15a t vj = 100c v r = 600v t vj = 100c i f = 30a fig. 3 peak reverse current i rm versus -di f /dt fig. 2 reverse recovery charge q r versus -di f /dt fig. 1 forward current i f versus v f t vj = 100c v r = 600v t vj = 100c v r = 600v i f = 60a i f = 30a i f = 15a q r i rm fig. 4 dynamic parameters q r , i rm versus t vj fig. 5 recovery time t rr versus -di f /dt fig. 6 peak forward voltage v fr and t fr versus di f /dt i f = 60a i f = 30a i f = 15a t fr v fr fig. 7 transient thermal resistance junction to case t vj =150c t vj =100c t vj = 25c constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.465 0.0052 2 0.179 0.0003 3 0.256 0.0397 note: fig. 2 to fig. 6 shows typical values
|
